Structural transformation of the BiSbTeSe2 topological insulator during Co laser MBE deposition
نویسندگان
چکیده
منابع مشابه
Transferring MBE-grown topological insulator films to arbitrary substrates and metal-insulator transition via Dirac gap.
Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only microsized flakes that are highly irregular in shape and thickness. In this work, we developed a process to transfer the entire area of TI Bi2Se3 thin films grown epitaxially on Al2O3 and SiO2 to arbitrary substrates, maintai...
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15 صفحه اولOrdered growth of topological insulator Bi2Se3 thin films on dielectric amorphous SiO2 by MBE.
Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators presents a challenge for applications of TI-junctions. We report the growth of topological insulator Bi2Se3 thin films on amorphous SiO2 by molecular beam epitax...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2019
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/1400/5/055016